uf1000f ? uf1008f 1 of 2 ? 2000 won-top electronics uf1000f ? uf1008f 10a isolation ultrafast glass passivated rectifier features ! glass passivated die construction b ! ultra-fast switching ! high current capability c ! low reverse leakage current ! high surge current capability g a ! plastic material has ul flammability classification 94v-o pin1 2 d mechanical data f e ! case: ito-220a full molded plastic ! terminals: plated leads solderable per p mil-std-202, method 208 ! polarity: see diagram i ! weight: 2.24 grams (approx.) l ! mounting position: any h ! marking: type number pin 1 + j pin 2 - k maximum ratings and electrical characteristics @t a =25c unless otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. characteristic symbol uf 1000f uf 1001f uf 1002f uf 1003f uf 1004f uf 1006f uf 1008f unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 50 100 200 300 400 600 800 v rms reverse voltage v r(rms) 35 70 140 210 280 420 560 v average rectified output current @t c = 100c i o 10 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 150 a forward voltage @i f = 10a v fm 1.0 1.3 1.7 v peak reverse current @t a = 25c at rated dc blocking voltage @t a = 125c i rm 10 500 a reverse recovery time (note 1) t rr 50 100 ns typical junction capacitance (note 2) c j 80 50 pf operating and storage temperature range t j , t stg -65 to +150 c note: 1. measured with if = 0.5a, ir = 1.0a, irr = 0.25a. 2. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c. wte power semiconductors ito-220a dim min max a 14.9 15.1 b ? 10.5 c 2.62 2.87 d 3.56 4.06 e 13.46 14.22 f 0.68 0.94 g 3.74? 3.91? h 5.84 6.86 i 4.44 4.70 j 2.54 2.79 k 0.35 0.64 l 1.14 1.40 p 4.95 5.20 all dimensions in mm
3 0 6 0 90 0 1 2 0 1 5 0 1 8 0 1 10 100 i , peak forward surge current (a) fsm number of cycles at 60hz fig. 3 max non-repetitive surge current 8.3 ms single half-sine-wave jedec method 10 100 400 0.1 1.0 10 100 v , reverse voltage (v) fig. 4 typical junction capacitance r 10 0 6 f - 10 0 8 f 10 0 0 f - 10 0 4 f c , capacitance (pf) j 0 2 4 6 8 10 0 5 0 100 150 i , a verag e fo r w ar d curren t (a) (av) t , case temperature ( c) fig. 1 forward current derating curve c 0.1 1.0 10 100 0.2 0.6 1.0 1.4 i , instantaneous forward current (a) f v , instantaneous forward voltage (v) fig. 2 typical forward characteristics f pulse width = 300 s 2% duty cycle m 10 0 6 f - 100 8 f 10 0 3 f - 10 04 f 10 0 0 f - 1 0 0 2 f uf1000f ? uf1008f 2 of 2 ? 2000 w on- t op e l e c t ron i cs
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